inchange semiconductor isc product specification isc silicon npn power transistor BDY90 description high dc current gain- : h fe = 30-120@i c = 5a excellent safe operating area high current capability applications designed for use in switching-c ontrol amplifiers, power gates,switching regulators, converters, and inverters. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v cev collector-emitter voltage v be = -1.5v 120 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 6 v i c collector current-continuous 10 a i cm collector current-peak 15 a i b b base current-continuous 2 a p c collector power dissipation @t c 25 60 w t j junction temperature 175 t stg storage temperature range -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BDY90 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ;i b = 0 120 v v ce (sat)-1 collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.5 v v ce (sat)-2 collector-emitter saturation voltage i c = 10a; i b = 1a 1.5 v v be (sat)-1 base-emitter saturation voltage i c = 5a; i b = 0.5a b 1.2 v v be (sat)-2 base-emitter saturation voltage i c = 10a; i b = 1a 1.5 v i cbo collector cutoff current v cb =120v; i e =0 1.0 ma i cev collector cutoff current v ce =120v;v be =-1.5v v ce =120v;v be =-1.5v;t c =150 1.0 3.0 ma i ebo emitter cutoff current v eb =6v; i c =0 1.0 ma h fe-1 dc current gain i c = 1a ; v ce = 2v 30 h fe-2 dc current gain i c = 5a ; v ce = 5v 30 120 h fe-3 dc current gain i c = 10a ; v ce = 5v 20 f t current-gain?bandwidth product i c = 0.5 a;v ce = 5v;f test = 5mhz 70 mhz switching times t on turn-on time 0.35 s t stg storage time 1.3 s t f fall time i c = 5a; i b1 = -i b2 = 0.5a, v cc =30v 0.2 s isc website www.iscsemi.cn
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